Printed dopant layers

ABSTRACT

A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.

RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.11/888,949, filed Aug. 3, 2007 now U.S. Pat. No. 7,767,520, which claimspriority to U.S. Provisional Patent Application No. 60/838,125, filedAug. 15, 2006, each of which is incorporated herein by reference in itsentirety.

FIELD OF THE INVENTION

The present invention relates to MOS or thin film integrated circuits inwhich the source/drain (S/D) regions are fabricated by printing a dopeddielectric film onto a semiconductor film and diffusing a dopant fromthe doped dielectric film into the semiconductor film.

DISCUSSION OF THE BACKGROUND

Typically, doped films in complementary MOS or thin film integratedcircuits use two masking steps, two ion implants and associated plasmaash/wet stripping steps. It would be advantageous to replace suchmasking steps and associated processing steps with relatively lessexpensive, less time-consuming processing techniques.

SUMMARY OF THE INVENTION

The present invention is directed to methods of making thin film devices(e.g., transistors, capacitors, diodes, etc.) and circuits including thesame on various substrates including, but not limited to, glass (e.g.,quartz) sheets, wafers or slips, plastic and/or metal foils or slabs, Siwafers, etc., all of which may carry one or more additional (e.g.,buffer, mechanical support, etc.) layers. Applications include, but arenot limited to displays (e.g., flat panel, plasma, LCD, organic orinorganic LED, etc.), RF devices, sensors, photovoltaics, etc.

One object of the invention is to provide a method for making a MOStransistor, comprising the steps of forming a plurality of semiconductorislands on an electrically functional substrate; printing a firstdielectric layer on or over a first subset of the semiconductor islandsand (optionally) a second dielectric layer on or over a second subset ofthe semiconductor islands, the first dielectric layer containing a firstdopant and the (optional) second dielectric layer containing a seconddopant different from the first dopant; and annealing the dielectriclayer(s), the semiconductor islands and the substrate sufficiently todiffuse the first dopant into the first subset of semiconductor islandsand, when present, the second dopant into the second subset ofsemiconductor islands. In a preferred embodiment, each of thesemiconductor islands comprises a Group IVA element.

Another object of the invention is to provide a method for making a MOStransistor, comprising the steps of forming a plurality of transistorgates on or over a substrate; printing a first dielectric layer on orover a first subset of the transistor gates and (optionally) a seconddielectric layer on or over a second subset of the transistor gates, thefirst dielectric layer containing a first dopant and the optional seconddielectric layer containing a second dopant different from the firstdopant; forming contact holes in each of the first and (optional) seconddielectric layers, exposing an upper surface of each transistor gate;and etching the first and second dielectric layers sufficiently to widenthe contact holes.

Another object of the invention is to provide an electronic device,comprising a substrate; a plurality of first semiconductor islands onthe substrate, the first semiconductor islands containing a firstdiffusible dopant; an optional plurality of second semiconductor islandson the substrate, the second semiconductor islands containing a seconddiffusible dopant different from the first diffusible dopant; firstdielectric films on the first subset of the semiconductor islands, thefirst dielectric films containing the first diffusible dopant; seconddielectric films on the second semiconductor islands, the seconddielectric layer films containing the second diffusible dopant; and aconductive (e.g., metal) layer in electrical contact with the first andsecond semiconductor islands.

The invention enables an all-printed thin film transistor (TFT) with ahigh-temperature-compatible gate. In a preferred embodiment, thisapproach leverages the use of a printed silicon ink (or “printed siliconprecursor”) as both active and gate layers. Silicon, metal silicidesand/or refractory metals allow the use of self-aligned structures thatcan withstand the relatively high processing temperatures typically usedfor dopant out-diffusion and activation. In addition, polysiliconenables (a) lower work functions for better threshold voltage (Vt)scaling, and (b) reoxidation of the gate edge to enable lower leakagecurrents, for memory retention. A metal gate allows for lower gateresistance. Either or both features can be used, depending on therequirements of the device.

The present invention replaces the relatively costly and time-consumingmasking steps with relatively inexpensive, high-throughput printing ofn- and p-type dopant source films. Optionally, the dopant dielectricfilm can be left in place as an interlayer dielectric, furthereliminating additional dielectric removal/deposition/patterning steps.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-7 show cross-sectional views of an exemplary embodiment of thepresent CMOS devices, having a printed gate over a gatedielectric-covered silicon island, and first and second printed dopeddielectrics on or over separate MOS devices, at various stages of anexemplary process flow.

FIG. 8 shows a top-down view of an exemplary embodiment of a gate arrayarchitecture including a plurality of the present printed MOS devices.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Reference will now be made in detail to the preferred embodiments of theinvention, examples of which are illustrated in the accompanyingdrawings. While the invention will be described in conjunction with thepreferred embodiments, it will be understood that they are not intendedto limit the invention to these embodiments. On the contrary, theinvention is intended to cover alternatives, modifications andequivalents that may be included within the spirit and scope of theinvention as defined by the appended claims. Furthermore, in thefollowing disclosure numerous specific details are given to provide athorough understanding of the invention. However, it will be apparent toone skilled in the art that the present invention may be practicedwithout these specific details. In other instances, well-known methods,procedures, components, and circuits have not been described in detail,to avoid unnecessarily obscuring aspects of the present invention.

For the sake of convenience and simplicity, the terms “coupled to,”“connected to,” and “in communication with” (and variations thereof)mean direct or indirect coupling, connection or communication, unlessthe context clearly indicates otherwise. These terms are generally usedinterchangeably herein, and wherever one such term is used, it alsoencompasses the other terms, unless the context clearly indicatesotherwise. In the present disclosure, the term “deposit” (andgrammatical variations thereof) is intended to encompass all forms ofdeposition, including blanket deposition, coating, and printing.Furthermore, with regard to certain materials, the phrase “consistingessentially of” does not exclude intentionally added dopants, which maygive the material to which the dopant is added (or the element orstructure formed from such material) certain desired (and potentiallyquite different) physical and/or electrical properties. The term“(poly)silane” refers to compounds or mixtures of compounds that consistessentially of (1) silicon and/or germanium and (2) hydrogen, and thatpredominantly contain species having at least 15 silicon and/orgermanium atoms. Such species may contain one or more cyclic rings. Theterm “(cyclo)silane” refers to compounds or mixtures of compounds thatconsist essentially of (1) silicon and/or germanium and (2) hydrogen,and that may contain one or more cyclic rings and less than 15 siliconand/or germanium atoms. In a preferred embodiment the silane has aformula Si_(x)H_(y), where x is from 3 to about 200, and y is from x to(2x+2), where x may be derived from an average number molecular weightof the silane. The term “hetero(cyclo)silane” refers to compounds ormixtures of compounds that consist essentially of (1) silicon and/orgermanium, (2) hydrogen, and (3) dopant atoms such as B, P, As or Sbthat may be substituted by a conventional hydrocarbon, silane or germanesubstituent and that may contain one or more cyclic rings. Also, a“major surface” of a structure or feature is a surface defined at leastin part by the largest axis of the structure or feature (e.g., if thestructure is round and has a radius greater than its thickness, theradial surface[s] is/are the major surface of the structure; however,where the structure is square, rectangular or oval, the major surface ofthe structure is typically a surface defined by the two largest axes,generally the length and width).

The invention is particularly applicable to printed silicon, silicide orrefractory metal gates in an “all-printed” process flow. Highly dopedpolysilicon, metal silicides (e.g. Ni-, Pt-, Pd, Co-, Ti, W,Mo-silicides and others) and/or refractory metals such as Pd, W or Mo,etc., are suitable. This further aspect also allows the use of inkjetteddopant dielectrics as dopant sources in a self-aligned flow. TFTs of thepresent invention capable of operating at GHz frequencies may requireand/or benefit from (1) narrow channel widths, (2) source and drainterminals that are self-aligned to the gate (optionally with a smallamount of overlap therebetween), and/or (3) high carrier mobility. Anexemplary description of a suitable processing flow for making devicesin accordance with the invention follows.

An Exemplary Process for a Partially or Fully Printed TFT

Referring to FIGS. 1-7, an exemplary process flow is shown. FIG. 1 showsa substrate 10 with lamination and/or dielectric layers 20 and 25thereon. Substrate 10 generally comprises a conventional mechanicalsupport structure, which may be electrically inert or active, and whichmay further include one or more advantageous and/or desired electricaland/or optical properties. Suitable electrically inert or inactivesubstrates may comprise a plate, disc, and/or sheet of a glass, ceramic,dielectric and/or plastic. Alternatively, suitable electricallyconductive substrates may comprise a wafer, disc, sheet and/or foil of asemiconductor (e.g. silicon) and/or a metal. In the case where thesubstrate comprises a metal sheet and/or foil, the device may furthercomprise an inductor and/or capacitor, and the method may furthercomprise forming an inductor and/or capacitor from the metal substrate.However, any such electrically conductive substrate should have aninsulator layer (e.g., layer 20) between it and any electrically activelayer or structure thereover, except in a location where electricalcontact is to be made from the structures and/or devices on theinsulator to a structure formed in the metal substrate (e.g., one ormore metal pads of an interposer, inductor and/or capacitor for an EASor RFID tag; see, e.g., U.S. patent application Ser. Nos. 10/885,283,11/104,375 and 11/243,460, respectively filed on Jul. 6, 2004, Apr. 11,2005, and Oct. 3, 2005, the relevant portions of which are incorporatedherein by reference). Preferably, the substrate comprises a memberselected from the group consisting of a silicon wafer, a glass plate, aceramic plate or disc, a plastic sheet or disc, metal foil, a metalsheet or disc, and laminated or layered combinations thereof, theelectrically conductive members of which generally have a barrier layer(e.g., TiN) and/or an insulator layer (e.g., a layer of thecorresponding oxide) thereon. In certain embodiments, the insulatorlayer may comprise a spin-on glass barrier layer having a thickness ofabout 1 μm. Similarly, glass and plastic substrates may further containa planarization layer thereon to reduce the surface roughness of thesubstrate, a surface energy modifying layer thereon of a material thatimproves the adhesion and/or that controls the spreading of a subsequentmaterial (e.g., an ink) printed or otherwise deposited thereon (see U.S.Provisional Application No. 60/919,290, filed on Mar. 20, 2007, therelevant portions of which are incorporated herein by reference), and/ora barrier layer thereon.

In FIG. 2, a physically isolated semiconductor island 30 is generallyformed on laminate/dielectric layer 20. In one embodiment, semiconductorisland 30 is formed by printing or coating a molecular and/ornanoparticle-based semiconductor ink, then converting it to a amorphous,hydrogenated Si or polysilicon thin film (e.g., by heating and/orcuring; see, e.g., U.S. Pat. No. 6,878,184 and/or U.S. patentapplication Ser. Nos. 10/616,147, 10/789,274, 10/950,373, 10/949,013,and 10/956,714, filed on Jul. 8, 2003, Feb. 27, 2004, Sep. 24, 2004,Sep. 24, 2004, and Oct. 1, 2004, respectively, and/or U.S. ProvisionalPat. Appl. Nos. 60/850,094 and 60/905,403, filed on Oct. 6, 2006 andMar. 5, 2007, respectively). Alternatively, one may conventionallydeposit a semiconductor film (e.g., by PECVD, LPCVD, sputtering of anelemental target, etc.), and pattern the film by photolithography.Further, the deposited (e.g., printed, coated or conventionallydeposited) semiconductor film (e.g., in the case where the semiconductorfilm comprises or consists essentially of a Group IVA element) may becrystallized in part or substantially completely by (UV) laser exposure,furnace or RTA anneal, optionally in the presence of a crystallizationpromoter such as Au, Ni, Al, etc. When the semiconductor film iscrystallized by laser annealing, one may simply remove thenon-irradiated, amorphous portions of the deposited film by selectiveetching in accordance with known techniques.

Forming the semiconductor thin film layer 30 may include printing asemiconductor precursor ink onto laminate/dielectric layer 20 to form apattern, drying the ink, curing the ink (generally by heating and orannealing the dried ink for a length of time sufficient to cross-link,oligomerize and/or polymerize the silane or Group IVA element precursor,and/or increase an average molecular weight, increase a viscosity and/orreduce a volatility of the composition), then partially or substantiallycompletely crystallizing the semiconductor film pattern to form apolycrystalline (e.g., polysilicon) film. Techniques for local printingof a liquid semiconductor precursor ink directly onto a substrate (orsurface film thereof) to form a semiconductor layer such as island 30are described in copending U.S. patent application Ser. Nos. 10/949,013and 11/203,563, filed on Sep. 24, 2004 and Aug. 11, 2005, the relevantportions of which are incorporated herein by reference. This latterapproach to forming MOS TFT structures may be cost effective due to (i)the efficient usage of the semiconductor precursor materials and (ii)the combination of semiconductor deposition and patterning into oneprinting step.

In preferred embodiments, semiconductor inks suitable for use in thepresent invention comprise a liquid-phase (poly)- and/or (cyclo)silane.Typically, although not necessarily always, liquid-phase semiconductorinks further comprise a semiconductor nanoparticle (such as passivatedSi, Ge or SiGe nanoparticles) and/or a solvent, preferably acycloalkane. Such nanoparticles (or nanocrystals) may be conventionallypassivated (e.g., with one or more surfactants or surface ligands, suchas alkyl, aralkyl, alcohol, alkoxy, mercaptan, alkylthio, carboxylicacid and/or carboxylate groups) or unpassivated. Thus, when using an inkcomprising or consisting essentially of a Group IVA element source (suchas a silane- and/or nanoparticle-based precursor to Si or doped Si),forming the semiconductor layer 30 may further comprise drying theliquid-phase precursor ink after deposition. See copending U.S.application Ser. Nos. 10/616,147, 10/789,317, and 10/789,274,respectively filed Jul. 8, 2003, Feb. 27, 2004, and Feb. 27, 2004,respectively), the relevant portions of each of which are incorporatedherein by reference.

Representative cyclosilane compounds of the formula (AH_(z))_(k) whereinA is Si, z is 1 or 2 (preferably 2) and k is from 3 to 12 (preferably 4to 8) and an exemplary method for their preparation are described ingreater detail in copending application Ser. No. 10/789,317, filed Feb.27, 2004, the relevant portions of which are incorporated herein byreference. Representative hetero(cyclo)silane compounds, doped silaneintermediates, exemplary methods for their preparation, and techniquesfor determining and/or controlling the dopant levels in the precursorinks and active films are described in greater detail in copendingapplication Ser. Nos. 10/950,373, 10/949,013 and 10/956,714,respectively filed on Sep. 24, 2004, Sep. 24, 2004 and Oct. 1, 2004, therelevant portions of which are incorporated herein by reference.Representative oligo- and polysilane compounds are disclosed in U.S.Provisional Appl. Nos. 60/850,094 and 60/905,403, filed Oct. 6, 2006 andMar. 5, 2007, respectively, the relevant portions of which areincorporated herein by reference.

After deposition (and generally, at least some drying), a semiconductorlayer is generally cured by heating, as described above in copendingU.S. patent application Ser. Nos. 10/789,274 and 10/949,013,respectively, filed on Feb. 27, 2004 and Sep. 24, 2004, the relevantportions of which are incorporated herein by reference) to form anamorphous, hydrogenated (doped) silicon (a-Si:H) layer. When asemiconductor layer originates or is formed from a (poly)silane,(cyclo)silane and/or hetero(cyclo)silane, the curing/heating step mayremove unwanted precursor/ink components or byproducts such as volatilecarbon-containing species or reduce the hydrogen content of the a-Si:Hlayer (which is particularly advantageous if laser crystallization is tobe used after semiconductor film formation). When a semiconductor layeroriginates or is formed from a hetero(cyclo)silane, the curing/heatingstep may also activate part of the dopant in the hetero(cyclo)silane,but in many embodiments, dopant activation may be more likely to occurduring a subsequent crystallization step (e.g., by laser irradiationand/or thermal annealing).

In various embodiments, semiconductor layer 30 comprises or consistsessentially of a lightly doped inorganic semiconductor material, such asone or more Group IVA elements (e.g., silicon and/or germanium), aso-called “III-V” material (e.g., GaAs), a II-VI (or chalcogenide)semiconductor, etc., which may further contain a dopant (such as B, P,As or Sb) in a concentration of from ˜10¹⁶ to ˜5×10¹⁸ atoms/cm³. In apreferred embodiment, the semiconductor thin film layer 30 generallycomprises or consists essentially of one or more Group IVA elements,preferably silicon or silicon-germanium.

In one embodiment, the semiconductor (transistor channel) layer 30 maybe lightly doped (e.g., having a dopant concentration of from about 10¹⁶to about 10¹⁸ atoms/cm³). Exemplary lightly doped semiconductor filmsand methods of forming the same are disclosed in copending U.S.application Ser. Nos. 10/950,373, 10/949,013, and 10/956,714,respectively filed on Sep. 24, 2004, Sep. 24, 2004, and Oct. 1, 2004,the relevant portions of which are incorporated herein by reference.When formed from an ink containing one or more (doped) molecular- and/ornanoparticle-based silicon precursors, the lightly doped semiconductorlayer 30 may have a concentration profile (e.g., dopant concentration asa function of semiconductor layer thickness) in an amorphous state thatis substantially uniform throughout substantially the entire thicknessof the semiconductor layer.

Typical thicknesses for semiconductor layer 30 may be from about 10, 25,50, or 100 nm to about 200, 500 or 1000 nm, or any range of valuestherein. The film thickness may be chosen to optimize the electricalproperties of the transistor. In addition, semiconductor layer 30 mayhave a width (e.g., the longest dimension shown in the cross-section ofFIG. 2) of at least 1, 5, 8 or 10 μm, up to 20, 50 or 100 μm or more, orany range of values therein. The channel layer 20 may have a length(e.g., the dimension normal to the plane of the page in FIG. 2) of atleast 1, 5, 10 or 20 μm, up to 50, 100, or 200 μm or more, or any rangeof values therein. Alternatively, when silicon island 30 comprisesmultiple layers, they can have the same or different doping types and/orconcentrations, and they can form various types of diodes (e.g., p-n orp-i-n diodes, Schottky diodes, etc.).

Alternatively, semiconductor island 30 can be formed by conventionalblanket deposition and (low-resolution) lithographic patterning. Blanketdeposition may comprise, e.g., evaporation, physical vapor deposition,sputtering, or chemical vapor deposition, as is known in the art.Alternatively, blanket deposition may comprise spin-coating an inkcomprising, e.g., a (poly)- and/or (cyclo)silane and/or semiconductornanoparticles (which may be passivated) and a solvent, and curing theink (see, e.g., U.S. Pat. No. 6,878,184 and U.S. patent application Ser.No. 10/749,876, filed Dec. 31, 2003, the relevant portions of which areincorporated herein by reference).

Referring to FIG. 3, gate dielectric 40 may be formed on thesemiconductor (e.g., polysilicon) film 30 by plasma-enhanced, low-,atmospheric- and high-pressure chemical vapor deposition, thermaloxidation in oxidizing and/or nitriding atmospheres, chemical bathdeposition of silicon and/or metal oxide(s) (e.g., silicon dioxide),liquid phase deposition (e.g., printing or coating) of a gate dielectricprecursor (e.g., a SiO₂ precursor) and converting it to a dielectricfilm, atomic layer deposition and/or a combination thereof. Thus, invarious embodiments, forming the gate dielectric layer 40 may compriseplasma or low-pressure chemical vapor deposition of the gate dielectriclayer, thermal oxidation of a surface of the semiconductor island 30, orliquid phase or chemical bath deposition of a gate dielectric precursor.In alternative embodiments, the gate dielectric can function as adielectric film in a capacitor.

Printing or coating a suitable dielectric precursor (e.g., liquid phasedeposition of a SiO₂ precursor, such as a tetraalkylsiloxane ortetraalkoxysilane, or chemical bath deposition of a silicon oxide and/ormetal oxide [e.g., silicon oxide] via controlled hydrolysis of silicicacid [H₂SiF₆] in the presence of boric acid) is generally followed byconverting it to a dielectric film (e.g., by annealing). Such conversionmay be preceded or followed by deposition of another metal oxide(s)(e.g. TiO₂, ZrO₂, HfO₂, etc.) by printing or conventional coating (e.g.,spin-coating, spray-coating, slit coating, extrusion coating, meniscuscoating, pen-coating, etc.), CVD, PECVD, LPCVD or sputter deposition, orby such conventional deposition of silicon oxide and/or nitride layers.Thus, in various embodiments of the present method, the gate dielectriclayer 40 may comprise a plurality of layers and/or be formed on all ofthe plurality of semiconductor islands 30. Alternatively, however, apreferred embodiment of the present invention comprises forming a gatedielectric layer 40 on or over at least a subset of a plurality ofsemiconductor islands 30.

Alternatively, when the semiconductor island 30 comprises a Group IVAelement (particularly silicon) and the substrate 10 is sufficientlythermally stable or tolerant, oxidation of the silicon-containing filmcan be accomplished by heating the film in a suitable atmosphere (air,O₂, ozone, N₂O or steam, or combinations thereof) to a temperaturehigher than about 600° C. The maximum temperature may be about1000-1100° C., more preferably about 900° C., to reduce, inhibit orprevent thermal damage (if any) to the substrate and/or films orstructures thereon. However, when the substrate comprise a material thatgenerally cannot be processed at such temperatures (e.g., aluminum andmany plastics), another method of forming an oxide (e.g., printing orvapor deposition) is preferred.

The gate dielectric film 40 may have a thickness of from 20 Å to 1000 Åor any range of values therein (e.g., from 30 to 400 Å, or from 50 to200 Å, etc.). Alternatively, a thicker gate dielectric layer 40 (e.g.,in the range of from 500 to 2000 Å, and in one implementation, on theorder of about 1500 Å) could be used, along with a material higher adielectric constant than silicon dioxide or aluminum oxide. However, forhigh speed transistors, generally a thin gate dielectric film ispreferred.

As shown in FIG. 4, the present method may further comprise forming agate 50 on the gate dielectric layer 40 on or over some or all of theplurality of semiconductor islands 30. The gate metal may be formed byprinting a suitable gate metal precursor (e.g. metal nanoparticles ororganometallic compound(s), doped molecular and/or nanoparticle-basedsilicon ink(s), silicide precursor ink(s), etc.) then converting it to agate metal. Use of doped silicon inks may further require and/or benefitfrom a high temperature anneal or laser irradiation to formpolycrystalline silicon and/or to activate the dopant to achievesufficient conductivity. Alternatively, a precursor for a seed layer maybe printed on the gate dielectric layer 40, and the gate metal (e.g. Ag,Au, Cu, Pd, Pt, etc.) may be electro- or electroless plated onto theseed layer. The seed layer may require and/or benefit from an activationstep before the plating process. Thus, forming the gate may compriseprinting a seed layer on the gate dielectric layer 40, then electro- orelectroless plating a gate material on the seed layer.

In one embodiment, the gate 50 comprises a metal silicide selected fromthe group consisting of nickel silicide, cobalt silicide, palladiumsilicide, platinum silicide, titanium silicide, tungsten silicide, andmolybdenum silicide. In another embodiment, the gate 50 comprises arefractory metal selected from the group consisting of palladium,tungsten, and molybdenum. In yet another embodiment, the gate 50comprises aluminum.

Metal inks may be deposited by coating or printing. In some embodiments,the metal may by blanket deposited by spin-coating an ink containing themetal-containing material and curing or annealing the metal,organometallic precursor(s) and/or metal nanoparticles (optionallybefore a laser patterning or low-resolution photolithography step).

Printing of the gate metal precursor and/or seed layer may include anyof a variety of printing techniques (e.g., ink-jetting, gravureprinting, offset lithography, etc., any of which can also be used toform the semiconductor island 30). Furthermore, patterning the gatemetal 50 may include coating or printing the gate metal precursor andlocally exposing it to laser radiation such that the radiated portionchanges its solubility characteristics in the exposed areas. Uponwashing away the exposed or unexposed area (depending on whether theprecursor is a positive or negative patternable material), theirradiated gate metal precursor stays behind to form the gate metal,optionally after an additional curing or annealing step. This embodimentmay provide advantages for the patterning of high-resolution metal gateswhich may not directly be achievable with direct printing methods (see,e.g., copending U.S. patent application No. 11/203,563, the relevantportions of which are incorporated herein by reference).

A metal-containing ink may comprise or consist essentially of the metalprecursor material and a solvent. For example, the metal ink maycomprise a metal-containing material in an amount of from 1 to 50 wt. %(or any range of values therein) of the ink and a solvent in which themetal-containing material is soluble. The metal precursors that aregenerally compatible with printing or (selective) plating may compriseorganometallic compounds or nanoparticles (e.g., nanocrystals) of ametal such as aluminum, titanium, vanadium, copper, silver, chromium,molybdenum, tungsten, cobalt, nickel, silver, gold, palladium, platinum,zinc, iron, etc., preferably metals capable of withstandinghigh-temperature processing, such as chromium, molybdenum, tungsten,nickel, palladium, platinum, conventional metal alloys thereof, such asaluminum-copper alloys, aluminum-silicon alloys, aluminum-copper-siliconalloys, aluminum-titanium alloys, etc., preferably a metal alloy that iscapable of withstanding high-temperature processing, such astitanium-tungsten alloys, Mo—W alloys, etc.; and electrically conductivemetal compounds, such as the nitrides and silicides of elemental metals(e.g., titanium nitride, titanium silicide, tantalum nitride, cobaltsilicide, molybdenum silicide, tungsten silicide, tungsten nitride,tungsten silicon nitride, platinum silicide, etc.). For example,suitable precursors of elemental aluminum include aluminum nanoparticlesand aluminum hydrides Ink precursors for the gate material may alsocomprise nanoparticles and/or molecular, oligomeric and/or polymericcompounds of silicon, silicide forming metals (e.g. Ni, Co, Pd, Pt, Ti,W, Mo, etc.), refractory metals (e.g., Pd, Mo, W, etc.), or combinationsthereof. Such nanoparticles (or nanocrystals) may be conventionallypassivated or unpassivated, as described above. The metal inks may beprinted as mixtures of two or more metal precursors or of one or moremetal precursors and one or more semiconductor precursors, and two ormore metal inks may be successively printed and dried as laminatedlayers. Such mixtures and/or laminates may be further heated orotherwise reacted during or after formation of such layers to form aprinted metal gate. The metal ink may further comprise one or moreadditives adapted to facilitate formation of low resistance contacts,such as a compound or nanoparticle of a silicide-forming metal, such asPd, Pt, Ni, Co, Mo, W, and Ti. Thus, the gate precursor ink may comprise(i) a silicon precursor (e.g., a [poly]- and/or [cyclo]silane and/orsemiconductor nanoparticle), (ii) metal nanoparticles and/or anorganometallic compound, and (iii) a solvent in which the silane and themetal nanoparticles and/or the organometallic compound are soluble.

The metal-containing ink may be dried by conventional and/or otherwiseknown processes. For example, metal precursor inks may be dried byheating the substrate containing the printed metal precursor ink thereonat a temperature and for a length of time effective to remove thesolvent and/or binder. Suitable temperatures for removing solvents froma printed ink may range from about 80° C. to about 150° C., or any rangeof temperatures therein (e.g., from about 100° C. to about 120° C.).Suitable lengths of time for removing solvents from a printed ink atsuch temperatures may ranges from about 1 second to about 10 minutes, 10seconds to about 5 minutes, or any range of times therein (e.g., fromabout 30 seconds to about 5 minutes, or about 1 minute to 3 minutes,etc.). Such heating may take place on a conventional hotplate or in aconventional furnace or oven, optionally in an inert atmosphere (asdescribed above).

The dried metal-containing material from the ink may be further annealedat a temperature and for a length of time sufficient to improve itselectrical and/or physical properties (e.g., conductivity, morphology,electromigration and/or etch resistance, stress and/or surface strain,etc.) and/or its adhesion to the underlying gate oxide 30. When themetal-containing ink is globally (blanket) deposited or printed,annealing is generally conducted to form a metal film. In oneembodiment, a resist is deposited on the annealed metal film forsubsequent (laser) patterning. Also, when laser direct-writing a metalprecursor ink results in a patterned metal and/or metal precursor,annealing is generally performed to form a metal layer with improvedproperties (e.g., conductivity, adhesion, etc.). Such annealing maycomprise either annealing of already-fused metal nanoparticles, orconverting a patterned metal precursor layer into a patterned metal.Suitable temperatures generally range from about 100° C. to about 300°C., or any range of temperatures therein (e.g., from about 150° C. toabout 250° C.). Suitable lengths of time for annealing may range fromabout 1 minute to about 2 hours, preferably from about 10 minutes toabout 1 hour, or any range of times therein (e.g., from about 10 toabout 30 minutes). Annealing may be conducted in a conventional furnaceor oven, optionally in an inert or reducing atmosphere (as describedabove). Thus, the present method may further comprise the step ofannealing the laser patterned metal gate sufficiently to improve itselectrical, physical and/or adhesive properties.

Plating may comprise, in one example, (laser) printing a seed layer ofmetal (e.g., Pd) using nanoparticles or an organometallic compound ofthe metal, then selectively depositing (e.g., by electroless orelectroplating) a bulk conductor (e.g., Co, Ni, Cu, Ag, Au, Pd, Pt,etc.) onto a (laser) printed metal seed layer. Metal nanoparticles orcompounds comprising cobalt, nickel, platinum, or palladium(particularly palladium) are preferred for the seed layer.

In certain embodiments, laser writing or laser patterning may comprisethe substeps of depositing a resist material on the blanket depositedmetal-containing layer, selectively irradiating portions of the resistmaterial with a beam of light from a laser having (i) a predeterminedwidth and/or (ii) a predetermined wavelength or wavelength band absorbedby the resist (or by an absorptive dye in the resist), developing theselectively irradiated resist with a developer to leave a patterncorresponding to the structure being formed (in this case, gate metal50; note that these steps apply to both positive and negative resists),removing those portions of the blanket deposited material notcorresponding to the desired or predetermined pattern (typically by dryor wet etching), and removing the remaining resist material. Preferably,the light has a wavelength in the infrared (IR) band (although it couldalso comprise a wavelength or wavelength band in the ultraviolet (UV)and/or visible band of the spectrum), the resist (or dye) absorbs and/oris sensitive to that wavelength or band of light, and the light beam isfocused on or directed at the desired or predetermined portions of theresist.

In one alternative of laser writing, a thermal resist may beadvantageously used to pattern the gate metal. Irradiation of thethermal resist with a relatively narrow laser beam (e.g., 5 μm wide, orby passing more diffuse light through a mask configured to definestructures of such width) from a laser heats the resist and changes itssolubility characteristics in a conventional developer that is used toremove the irradiated (written) or non-irradiated (unwritten) portionsof the resist, depending on whether the resist is positive- ornegative-acting, respectively. Such resists are generally availablecommercially from Creo Inc., Burnaby, British Columbia, Canada.Preferred thermal resists include Graviti Thermal Resist (Creo) and theAmerican Dye Sources Thermolak series. The resist may also comprise aconventional (photo)resist material having an infrared (IR)light-absorbing dye therein. Preferred (photo)resists include AZ1518 (AZElectronic Materials) and SPR220 (Shipley), and preferred infrared (IR)light-absorbing dyes include American Dye Source 815EI, 830AT, 830WS and832WS, Avecia Projet 830NP and 830 LDI, Epolin Epolight 4148, 2184,4121, 4113, 3063 and 4149, HW Sands SDA5303 and SDA4554. Afterdevelopment, metal (or metal precursor) material outside of the(predetermined) gate pattern may be removed by wet or dry etching. Wetetching may also advantageously undercut the resist to provide an evennarrower gate and/or transistor channel width than would be possibleusing dry etching.

In various embodiments, the gate comprises doped polysilicon, a metalsilicide or a refractory metal. In the case of polysilicon, the siliconprecursor ink may comprise a (cyclo)silane and/or silicon nanocrystals(each of which may be present in an amount of, e.g., from 1 to 50 wt. %of the ink) and a solvent in which the silane and/or siliconnanocrystals are soluble. The silicon nanocrystals may be passivatedand/or functionalized to enable light-based processing (e.g., laserwriting; see, e.g., U.S. patent application Ser. Nos. 10/616,147,10/749,876, 10/789,317, 11/084,448 and 11/203,563, filed on Jul. 8,2003, Dec. 31, 2003, Feb. 27, 2004, Mar. 18, 2004, and Aug. 11, 2005,respectively, the relevant portions of each of which are incorporatedherein by reference). Preferably, the silane ink compounds (optionallycomprising Ge atoms) may optionally be doped as disclosed in U.S. patentapplication Ser. Nos. 10/949,013, 10/950,373, and 10/956,714, filed onSep. 24, 2004, Sep. 24, 2004, and Oct. 1, 2004, respectively; therelevant portions of each of which is incorporated herein by reference).After printing, the printed silane ink is cured to form (optionallydoped) amorphous silicon films. Such films can be further crystallizedusing conventional methods (e.g., laser, furnace or metal-inducedcrystallization) to form (optionally doped) polycrystalline silicon. Incase of undoped poly-Si gate patterns, doping may be accomplished byimplantation, or more preferably, by doping from a printed doped oxide(see the description herein) to form the printed conductive gate 50.Such silicon inks and processes of making and using the same can also beapplied to formation of the semiconductor islands 30 (and vice versa).

In the case of a metal silicide gate 50, the precursor ink may comprisenanoparticles and/or molecular, oligomeric and/or polymeric compounds ofsilicon and silicide forming metals (e.g. Ni, Co, Pd, Pt, Ti, W, Mo,etc.). The metal/Si ratio in the silicide precursor ink may range from10/1 to 1/10. Preferably, the ink comprises silicon hydride (e.g.,[poly]silane) compounds as mentioned above and nanoparticles and/ororganometallic compounds of silicide forming metals (e.g., Ni(PPH₃)₄,Ni(COD)₂, Ni(PF₃)₄ etc.). After printing the silicide precursor ink, theprinted film is cured and annealed under conditions (atmosphere,temperature and time) which facilitate the formation of the intendedsilicide phase.

In case of a refractory (metal) gate, the precursor ink may comprisenanoparticles and/or molecular or oligomeric compounds of refractorymetals (e.g., Pd, Mo, W, etc.). Examples for molecular or oligomericcompounds include carboxylate, acetylacetonate, allyl, phosphine,carbonyl, and/or other complexes of such metals. After printing therefractory metal precursor ink, the printed film is cured and annealedunder conditions (e.g., atmosphere, temperature and time) whichfacilitate the formation of the intended refractory metal phase.

In various embodiments, the gate 50 has a length of at least 0.1microns, 0.5 microns, 1 micron, or 2 microns. In one implementation, theminimum gate length is about 5 microns. The gate 50 may have a width offrom about 1 μm to about 1000 μm or any range of values therein (e.g.,from about 2 μm to about 200 μm, or from about 5 μm to about 100 μm,etc.), and a thickness of from about 50 nm to about 10,000 nm or anyrange of values therein (e.g., from about 100 to about 5000 nm, or fromabout 200 to about 2000 nm, etc.).

In one embodiment, prior to printing the first and second dielectriclayers (see FIG. 5), but after forming the gates 50 and 55, an exposedportion of the gate dielectric layer 40 is removed to form etched gatedielectric layers 42 and 44. When the exposed portions of the gatedielectric layer 40 are removed by wet etching, the etched gatedielectric films 42-44 will generally have a width and length slightlyless than the corresponding dimensions of the gate metal layer(generally by about twice the thickness of the gate dielectric layer40), but when gate dielectric film 40 is dry etched, the etched gatedielectric films 42-44 will have substantially the same width and lengthas the corresponding gates 50-55. Alternatively, a printed gatedielectric layer can have essentially any width and length, and when thegate dielectric has a width slightly greater than the correspondinggates 50-55 (e.g., by not more than twice the length of thecorresponding gates 50-55, or perhaps about half of the distance fromthe sidewall of gate 50 to the corresponding sidewall of semiconductorisland 30), subsequent annealing to dope the underlying semiconductorisland may result in a kind of lightly doped source-drain extension(“LDD”) effect.

Referring to FIG. 5, in one embodiment, a first doped dielectric layer60 and a second doped dielectric layer 65 may be printed on therespective first gate 50, second gate 55, and exposed portions of thesemiconductor islands 30 and substrate surface layer 20. Generally, thedopant in the first doped dielectric layer 60 and the dopant in thesecond doped dielectric layer 65 are of different types (e.g., one isN-type and the other is P-type). Thus, in the present method, the firstdopant (e.g., in the first dielectric layer) may comprise phosphorous,and the second dopant (e.g., in the second dielectric layer) maycomprise boron. Dopant may be subsequently diffused into the underlyingsemiconductor islands 30 by annealing to form first channel 31, firstsource/drain terminals 32-33 adjacent thereto, second channel 35, andsecond source/drain terminals 36-37 adjacent thereto. Although not shownin FIG. 5, each of the first and second doped dielectric layers 60 and65 may independently cover a plurality of adjacent semiconductor islands30 (e.g., to form TFTs of the same dopant type next to each other),and/or the first and second doped dielectric layers 60-65 may overlap.

In another embodiment (not shown in the drawings), the gate dielectriclayer 40 (see FIG. 4) remains on the entire surface of semiconductorisland 30, and the first and second doped dielectric films 60-65 are onthe gate and exposed portions of the gate dielectric layer 40. Dopantmay be subsequently diffused through the gate dielectric layer 40 intothe underlying semiconductor island 30 to form first channel 31, firstsource/drain terminals 32-33, second channel 35, and second source/drainterminals 36-37. In this embodiment, the gate dielectric layer 40 maycause a lower concentration and/or density of dopant to diffuse underthe edges of the gates 50-55 (and in some cases to a shallower depth),resulting in an effect similar to lightly doped source/drain extensions(e.g., LDD's; see U.S. patent application Ser. No. 11/805,620, entitled“Graded Gate Field,” and filed May 23, 2007, and U.S. Provisional Pat.Appl. No. 60/802,968, filed May 23, 2007, the relevant portions of whichare incorporated by reference).

In one embodiment, and as shown in FIG. 6, after printing the firstdielectric layer 60 and second dielectric layer 65, contact holes 70, 72and 74 are formed therein, exposing (i) at least part of an uppersurface of the gate 50 (which is, in turn, over the semiconductor island30 as shown, but the contact hole to the gate 50 is, in a preferredembodiment, not over the semiconductor island 30 and is therefore notshown in the drawings) and (ii) portions of the source/drain terminals32-33 and 36-37 adjacent to semiconductor channels 31 and 35 on opposedsides of the gates 50 and 55, respectively. Forming contact holes 70-74may comprise removing portions of the first dielectric layer 60 and thesecond dielectric layer 65 (e.g., as described in U.S. patentapplication Ser. No. 11/818,078, filed on Jun. 12, 2007), particularlywhen the pattern of printing the doped dielectrics 60-65 does notinclude a contact hole. In the implementation shown, the entire width ofthe first and second doped dielectric layers 60 and 65 in at least partof the space between semiconductor islands 30 (see, e.g., FIG. 4) isremoved. In another implementation (not shown), at least part of thefirst and second doped dielectric layers 60 and 65 remains in the spacebetween semiconductor islands 30, at least partly to facilitate dopingof the source/drain terminals 33 and 36 and/or electrical isolation ofsubsequently formed interconnects to adjacent source/drain terminals 33and 36.

Alternatively, printing the first dielectric layer 60 and the seconddielectric layer 65 may further comprise forming contact holes 70-74therein, to expose an upper surface of the gates 50-55 and portions ofthe source/drain terminals 32-33 and 36-37 adjacent to semiconductorchannels 31 and 35 on opposed sides of the gates 50-55. In other words,the pattern in which the doped dielectrics 60-65 are printed includes acontact hole in such locations. Thus, in this alternative embodiment,the doped dielectrics 60-65 are printed in a pattern covering the gates50 and 55 over the semiconductor islands 30, but exposing at least partof the source/drain terminals 32-33 and 36-37 and gates 50-55. In theembodiment shown in FIG. 5, the doped dielectrics 60-65 are printed in apattern covering the gates 50 and 55 and the entirety of thesemiconductor islands 30. In either case, the first and seconddielectric layers 60-65 may be further etched sufficiently to widen thecontact holes 70-74. In a further alternative embodiment, the printeddoped dielectrics 60-65 have a sufficient thickness variation in thecontact areas from the remainder of the layer to enable a timed etch toopen contact holes over the gates 50 and 55 and the source/drain areas32-33 and 36-37, while only partially removing the dielectric area inthe remaining areas.

Preferably, dielectrically effective thicknesses of the first and seconddielectric layers 60-65 remain after etching. Thus, a preferredembodiment of the present device comprises contact holes 70-74 in atleast a subset of the first and second dielectric films 60-65, exposingat least part of an upper surface of the underlying gates 50-55 andportions of each semiconductor island 30-35 on opposed sides of eachgate 50 or 55, corresponding to source/drain terminals 32-33 and 36-37.

Referring to FIG. 6, after printing the doped dielectrics 60 and 65 oversemiconductor islands 30 corresponding to n- and p-doped areas (andpreferably before opening the contact holes 70, 72 and 74), dopant drivein and activation are conducted (generally by annealing), typically at atemperature in the range of 750-1100° C. (but preferably, in oneimplementation, at a temperature of ≦800° C.) using furnace annealing orRapid Thermal Activation. In such an implementation, the gate materialis selected to be able to tolerate this temperature. In a preferredembodiment, a polysilicon gate 50 can be automatically doped duringdrive in/activation of dopant from the dielectric layers 60-65 into thesilicon islands 30, resulting in n+ poly-to-nMOS and p+ poly-to-pMOSdevices. Alternatively, the dopant may be driven into the semiconductorislands 30 (e.g., silicon) by UV-lamp flash annealing or laserirradiation, using a wavelength of light and/or a light power sufficientto diffuse a dopant from the dielectric into the semiconductor and/oractivate the dopant once in the semiconductor.

Thus, in various embodiments of the present device, the source and drainterminals may comprise (i) a Group IVA element, a III-V compoundsemiconductor such as GaAs, or a II-VI (or chalcogenide compound)semiconductor such as ZnO or ZnS, and (ii) a dopant element. Preferably,the semiconductor comprises a Group IV element (e.g., Si and/or Ge) anda dopant selected from the group consisting of B, P, As and Sb.

In a preferred embodiment, N- and P-dopants (in the form of dopeddielectric layers 60-65) are printed using inkjetting. Most preferably,the N- and P-dopants are inkjetted simultaneously into different areasof the circuit from two sets of inkjet heads (1 or more inkjet heads foreach type of dopant) mounted in the same printer, each set loaded withN- or P-dopant(s), respectively. Alternatively, N- and P-dopants may beprinted in two alternate or separate processes and/or machines. In thislatter embodiment, other printing or deposition technologies besidesinkjetting, such as flexographic, offset lithographic, gravure, screenand stencil printing, slit and/or extrusion coating, etc., may beutilized. Simultaneous or sequential printing of complementary dopantmaterials (optionally in combination with an array type architecture forthe gate layout) results in an ability to overcome resolution and dropplacement accuracy issues associated with inkjet or other printingprocesses, allowing printing to substitute for relatively expensivemasking layers, and eliminating other processing steps associated withphotolithography.

The dielectric dopant can comprise a doped silane ink (as disclosed inU.S. patent application Ser. Nos. 10/949,013, 10/950,373, and10/956,714, the relevant portions of each of which are incorporated byreference), which may be cured after printing in an oxidizingatmosphere, or a doped glass ink which is directly inkjetted onto thesubstrate, islands and gate (as disclosed in U.S. Provisional Appl. No.60/926,125, filed Apr. 24, 2007, the relevant portions of which areincorporated by reference). Alternatively, the doped dielectric ink maycomprise a conventional spin-on dopant (see also the list ofnon-volatile dopants below) and an oxidized silane (e.g.,cyclo-Si₅O₅H₁₀, or cyclo-[SiH(OH)]₅).

The surface of one or more materials on which the doped dielectrics60-65 are printed may be modified to improve wetting, optimize adhesion,flow rates, etc., and the doped dielectric ink formulation may beoptimized to improve conformality over the gate. Examples of precursorsfor the doped glass include conventional spin-on-dopant (SOD)formulations and customized versions with increased viscosity (e.g.,“customized” by replacing or diluting the solvent in the conventionalformulation with a similar or compatible solvent of higher viscosity),doped molecular silicon ink formulations which can be oxidized at lowtemperatures (e.g. ≦400° C.) after deposition (e.g. cyclic, linear orbranched silane oligomers or polymers which may include one or moredopant substituents, such as cyclo-Si₅H₉PR₂, wherein R is lower[C₁-C₄]alkyl, phenyl or C₁-C₄-alkyl substituted phenyl, or a dopantprecursor in the formulation [e.g. tert-butyl phosphine]), oxidizeddoped molecular silicon ink formulations (e.g. oxidized versions ofcyclic, linear or branched silane oligomers or polymers (e.g.,cyclo-Si₅O₅H₁₀) with dopant precursors in the formulation (e.g., mono-,di- or tri-tert-butylphosphine or oxidized analogs thereof) or dopantsubstituents thereon, glass forming formulations (e.g., so-calledsol-gel formulations) containing phosphorous or boron compounds (e.g.,organophosphates such as di-n-butylphosphate, or organoborates such astri-t-butylborate, etc.).

Alternatively, the dielectric containing the dopant(s) can be removedafter drive-in/annealing (e.g., by etching). Suitable dielectrics insuch an embodiment include those listed above and those that, afterprinting, form a thin non-volatile film (e.g., an oxide) on the surfaceof the semiconductor and/or gate, either intrinsically (e.g., byprinting a solution containing solid precursors) or by conversion (e.g.,oxidation, hydrolysis, thermal decomposition, irradiation, etc.) of aliquid-phase precursor. Possible dielectrics in such an embodimentinclude compounds and/or polymers containing phosphorous and oxygen(which may further include silicon, carbon, hydrogen and/or nitrogen),boron (which may further include silicon, carbon, hydrogen, oxygenand/or nitrogen), arsenic and/or antimony (either of which may furtherinclude silicon, carbon, hydrogen and/or oxygen), etc. Exemplaryphosphorous-containing dielectrics include:

-   -   inorganic oxophosphorous compounds and acids (e.g., P₂O₃, P₂O₅,        POCl₃, etc.);    -   phosphosilicates;    -   monomeric, dimeric and/or oligomeric phosphates (e.g. meta-        and/or polyphosphates);    -   phosphonates, phosphinates, and phosphines;    -   organic oxophosphorous compounds and acids (e.g., alkyl(aryl)        phosphates, phosphonates, phosphinates and condensation products        thereof); and    -   alkyl- and/or arylphosphonic and/or -phosphinic acids.

Exemplary boron-containing dielectrics include:

-   -   inorganic boron compounds and acids (e.g., boric acid, B₂O₃);    -   borosilicates, borazoles and polymers thereof;    -   boron halogenides (e.g., BBr₃);    -   boranes (e.g., B₁₀H₁₀), and sila- and/or azaboranes; and    -   organic boron compounds and acids (e.g. alkyl/aryl boronic acid,        borates, boroxines and borazoles, borane addition complexes        etc.).

Exemplary arsenic and/or antimony-containing dielectrics include:

-   -   oxo- and/or aza-analogs of the above compounds, such as As₂O₃        and Sb₂O₃; and    -   arsinosilanes, such as cyclo-As₅(SiH₃)₅.

Etching of the doped glass pattern and gate dielectric is accomplishedby exposure to one or more suitable etchants including, but not limitedto, HF-based wet etchants (e.g., buffered oxide etch [BOE], native oxideetch [NOE], aq. pyridine:HF, etc.), HF-based or -producing vapors orgases, plasma etching, etc. The etchant may be chosen such that the etchrate of the gate dielectric 40 and the doped glass layer 60 and/or 65 issufficiently larger than the etch rate of the semiconductor layer 30(e.g., silicon) and gate metal layer 50 to enable substantially completeremoval of the doped glass (in a desired and/or predetermined amount)without substantial removal of the semiconductor layer 30 and gate metal50.

After etching, and an optional cleaning step, as shown in FIG. 7, ametal layer (e.g., comprising metal wires 80-86) is formed in contactwith each of the exposed source/drain portion 32-33 and 36-37,respectively, and with an upper surface of each gate 50-55 (not shown).Preferably, metal layer 80-86 comprises printing a metal ink on theexposed surfaces of the source/drain terminals 32-33 and 36-37, theexposed surfaces of the gate(s) 50-55 (not shown), and where applicable,the first dielectric layer 60 and (optionally) second dielectric layer65. Preferably, the metal layer is in contact with the upper surface ofthe exposed gate(s) and with the exposed portion(s) of the semiconductorislands. The metal layer 80-86 preferably comprises aluminum, silver,gold, copper, palladium or platinum. The metal layer 80-86 may also beformed by electro- or electroless deposition onto a printedmetal/conductive seed layer.

In a preferred embodiment, as shown in FIG. 7, an interconnect metal80-86 is printed on the exposed source/drain contacts. Furthermore, thisinterconnect metal may also contact the gate metal (not shown) to form adiode-connected transistor. The printed interconnect metal is used toconnect transistors within the same layer and/or to provide a lowerresistance (or shallower) contact area for a via structure. Theresistance of the interconnect metal is preferably lower than 10Ohm/square. Thus, the circuit may be completed by printing aninterconnect metal connecting the respective contact areas in the openvia holes 70-74. The same techniques and materials described above forthe gate 50 can be utilized for printing a metal interconnect (see alsoU.S. patent application Ser. Nos. 10/885,283, 11/104,375 and 11/243,460,respectively filed on Jul. 6, 2004, Apr. 11, 2005, and Oct. 3, 2005, therelevant portions of which are incorporated herein by reference), butthe embodiment pertaining to printing a silicon layer is generallyapplicable to formation of a seed layer for subsequent formation of ametal silicide.

Printing and/or forming the interconnect metal may include printing asuitable interconnect metal precursor (e.g., metal nanoparticles ororganometallic compound(s), silicide precursor ink(s), etc., asdescribed above) and converting it to the interconnect metal.Alternatively, a precursor for a seed layer may be printed on thecontact areas as described above, and the interconnect metal (e.g., Ag,Au, Cu, Pd, Pt, etc.) can be electro- or electrolessly plated on theseed layer. Alternatively, patterning the interconnect metal may includecoating or printing the interconnect metal precursor and locallyexposing it to laser radiation such that it changes its solubilitycharacteristics in the exposed areas. Upon washing away the undesiredarea, the interconnect metal precursor stays behind to form theinterconnect metal, generally after an additional curing or annealingstep. This embodiment may provide advantages for the patterning ofrelatively high-resolution metal interconnect which may not directly beachievable with direct printing methods.

To ensure good contact, the structure may furthermore be annealed toform a silicide at the interface with silicon, or throughout the entirefilm thickness of the contact areas between the interconnect metal andthe silicon. Suitable silicide forming metals include but are notlimited to Al, Ni, Pd, Pt, Mo, W, Ti, Co, etc. The interconnect metalmay be chosen from such silicide forming metals. Alternatively, theinterconnect metal precursor ink may contain additives which formsilicides. For example, silver inks doped with Ni organometalliccompounds have been observed to lower the contact resistance between asilver interconnect and doped silicon source/drain contacts. An analysishas also revealed that the Ni in such an ink has segregated to thesilicon interface, presumably resulting in formation of a silicide.

Conductors in communication with one of the source/drain terminals orthe gate terminal may also be coupled to or continuous with another oneof the conductors. For example, in a diode-configured transistor, aconductor may be in electrical communication with one source/drainterminal and the gate. In a capacitor-configured transistor, a conductormay be in electrical communication with both source/drain terminals.Alternatively, a thin dielectric layer may be formed over a source/drainterminal, and a conductor capacitively coupled to the underlyingsource/drain terminal may be formed thereover.

After printing the interconnect metal, if the doped dielectric isremoved, an interlayer dielectric (not indicated) may be printed tocover any exposed active areas (e.g., the gate and source/drainregions), but leaving via holes in the appropriate areas. The interlayerdielectric precursor may comprise a glass-forming formulation (e.g.,spin-on-glass formulations such as [organo]-silicates or -siloxanes), anorganic dielectric (e.g. polyimide, BCB, etc.), an oxidized siliconprecursor (e.g., an oxidized silane such as Si₅O₅H₁₀, etc.), ormolecular and/or nanoparticle based silicon formulation (which can beoxidized after printing).

In one aspect, the invention uses simultaneous inkjetting of twodifferent dielectric dopants (e.g., liquid-phase spin-on dopants havinga complementary dopant type therein). The invention may alsoadvantageously employ a “gate array” style architecture as shown in FIG.8 (and discussed below) to allow relatively relaxed design rules, andusing present inkjetting capabilities (e.g., a minimum resolution, withadequate alignment margins, of about 50 μm). The technique(s) describedherein are useful for manufacturing a variety of products, includingRFID tags (e.g., where complementary dopant-containing dielectrics areprinted) and display devices (e.g., for flat panel displays and/orplasma displays where parts of the display may be printed with only onetype of doped dielectric).

As is shown by the following table, the inventive method has thefollowing advantageous improvements: most notably, a minimum reductionof up to six processing steps, along with associated cleaning and/orpre-processing steps.

Conventional Art The Invention 1. N+ Mask Inkjet N+, P+ dopants 2. N+Implant — 3. Ash/Strip — 4. P+ Mask — 5. P+ Implant — 6. Ash/Strip — 7.Activate Furnace Activate 8. ILD Deposition —

An exemplary process flow for making a thin film transistor inaccordance with the present invention includes the following steps:

-   -   Deposit lightly doped or undoped silane to form amorphous Si        thin film islands    -   (Optional) Dehydrogenate amorphous Si    -   Crystallize lightly doped or undoped amorphous Si (e.g., by        Excimer laser treatment or furnace treatment)    -   Deposit, grow or otherwise form gate oxide    -   Deposit gate metal    -   (Optional) Etch exposed areas of gate oxide    -   Print or otherwise pattern source and drain areas by depositing        doped glass    -   Activate and/or diffuse dopants into source and drain areas        (e.g., by heat treatment)    -   Open contact holes    -   Print intermetal connect    -   Conventional annealing    -   Hydrogenation (optional)    -   Testing (optional)

In general, one may (and typically does) leave the doped dielectricfilms 60-65 printed on the semiconductor layer 30 in place as aninterlayer dielectric (ILD). As shown by the comparison above, thepresent invention can eliminate multiple tools and multiple processingsteps, reduce defects and cycle time (e.g., engineer-hours and/ortechnician-hours used for processing), and eliminate or reduceinventory. The invention essentially condenses eight operations to two.

In one embodiment, semiconductor islands or layers are printed on thesubstrate, where the first dielectric layer is printed at least in parton a first subset of the semiconductor islands or layers, and the seconddielectric layer is printed at least in part on a second subset of thesemiconductor islands or layers. The method generally further comprisesannealing the dielectric layer(s) and the semiconductor islands orlayers sufficiently to diffuse the first dopant into a first subset ofsemiconductor islands or layers and the second dopant into a secondsubset of semiconductor islands or layers. The method may furthercomprise printing a silicon- and/or metal-containing ink in contactholes 70, and in particular, when the contact holes 70 are formed byremoving portions of the first dielectric layer and the seconddielectric layer. In a preferred embodiment, printing the semiconductorislands on the substrate is done prior to forming the transistor gates.In one embodiment, the first dopant comprises an N-type dopant, andpreferably, the first dopant comprises phosphorous. As a result, thesecond dopant generally comprises boron.

The present invention takes advantage of the strengths of inkjetprinting. In one embodiment, two sets of inkjet heads (1 or more headsin each set), offset by the N+-P+ space (or a multiple of the minimumspacing between semiconductor islands 30; see FIG. 8), are used forsimultaneous processing, thereby minimizing alignment issues andreducing the number of tools for manufacturing operational devices.Thus, in various embodiments, the semiconductor ink may be printed in apattern forming an array of semiconductor islands (e.g., in an x-by-yarray of rows and columns, where x and y are independently an integer ofat least 2, 3, 4, 8 or more), and the first and second dielectric layersmay be printed on or over first and second groups (e.g., blocks, rowsand/or columns) of adjacent semiconductor islands (see FIG. 8). As shownin FIG. 8, “doubling up” N—N and P—P doped dielectric stripes 160-165allows for a relatively wide inkjet print swath. Printing dopeddielectric stripes 160-165 minimizes complex shapes and wetting issues.Advantageously, the different doped dielectrics in the N+-P+ space 168overlap with each other, although it is generally not necessary. In thecase where the doped dielectrics 160-165 overlap, metal routing can bedone in the N+-P+ space 168. Thus, an N+-P+ space 168 having a width ofup to 15 μm will not significantly adversely affect device performancefor some commercial applications.

As shown in FIG. 8, silicon islands 131 a-b and 135 a-b have gates(e.g., 150 and 155) thereon or thereover. One or more of the gates 150and/or 155 may be electrically coupled to overlying signal lines 188and/or 189. Where a contact hole (not shown) exists or is formed betweena gate and a signal line (e.g., between gate 150 and signal line 189 orbetween gate 155 and signal line 188), the contact hole is generally notformed over the corresponding silicon island (e.g., 135 a). In oneembodiment, doped dielectric stripe 160 includes an N-type dopant, dopeddielectric stripe 165 includes a P-type dopant, signal line 188 carriesa first power supply (e.g., Vdd or Vcc), and signal line 189 carries asecond power supply (e.g., ground or Vss).

One aspect of the present method comprises annealing the dielectriclayer(s) and the semiconductor islands or layers sufficiently to diffusethe dopants into a subset of semiconductor islands or layers. Apreferred device comprises first and second pluralities of semiconductorislands and first and second dielectric films, wherein the first dopantcomprises an n-type dopant and the second dopant comprises a p-typedopant. Preferably, the first dopant comprises phosphorous, and thesecond dopant comprises boron.

CONCLUSION/SUMMARY

The present invention advantageously provides a low cost method for aprinted approach to source/drain (S/D) layers in the fabrication of MOSor thin film integrated circuits using a doped dielectric film, havingreliable, commercially acceptable electrical characteristics (e.g.,on/off speeds and ratios, carrier mobilities, V_(t)'s, etc.). Printedand/or radiation-defined semiconductor structures (and, optionally,printed and/or radiation-defined conductor structures) may provideresults similar to structures formed by more conventional approaches,but at a much lower cost and at a much higher throughput (on the orderof hours to days, as opposed to weeks to months) than conventionalprocess technology, and reduce the number of processing tools used formanufacturing operational devices.

The foregoing descriptions of specific embodiments of the presentinvention have been presented for purposes of illustration anddescription. They are not intended to be exhaustive or to limit theinvention to the precise forms disclosed, and obviously manymodifications and variations are possible in light of the aboveteaching. The embodiments were chosen and described in order to bestexplain the principles of the invention and its practical application,to thereby enable others skilled in the art to best utilize theinvention and various embodiments with various modifications as aresuited to the particular use contemplated. It is intended that the scopeof the invention be defined by the claims appended hereto and theirequivalents.

1. An electronic device, comprising: a) a substrate comprising a plate,disc or sheet of a glass, ceramic or plastic, a foil, sheet or disc of ametal, or a laminated or layered combination thereof; b) a plurality ofphysically isolated semiconductor islands on the substrate containing adiffusible dopant; c) a doped dielectric layer in a pattern on or overthe plurality of semiconductor islands and the substrate, the dopeddielectric layer containing the diffusible dopant; and d) a metal layerin electrical contact with the plurality of semiconductor islands. 2.The device of claim 1, wherein each of the semiconductor islandscomprises a Group IVA element.
 3. The device of claim 2, wherein theGroup IVA element is Si.
 4. The device of claim 1, further comprising agate dielectric layer on or over each of at least a subset of theplurality of semiconductor islands.
 5. The device of claim 4, furthercomprising a gate over each of the subset of the plurality ofsemiconductor islands and on each of the gate dielectric layers, whereinthe doped dielectric layer is over the gates.
 6. The device of claim 5,wherein the gates comprise aluminum, silver, gold, copper, palladium,tungsten, platinum, or molybdenum.
 7. The device of claim 5, furthercomprising contact holes in the doped dielectric layer, exposing (i) atleast part of an upper surface of one or more the gates and (ii)portions of one or more of the semiconductor islands on opposed sides ofeach of the one or more gates.
 8. The device of claim 7, wherein themetal layer is in contact with the exposed upper surface(s) of the oneor more gate(s) and with the exposed portions of the one or moresemiconductor islands.
 9. The device of claim 4, wherein the gatedielectric layer is formed by chemical vapor deposition, chemical bathdeposition, liquid phase deposition, atomic layer deposition, or acombination thereof.
 10. The device of claim 4, wherein the gatedielectric layer is formed by thermal oxidation.
 11. The device of claim1, wherein there are spaces between adjacent semiconductor islands andthe doped dielectric layer is within the spaces between the adjacentsemiconductor islands.
 12. The device of claim 1, wherein the dielectriclayer comprises a silicon oxide and a dopant selected from the groupconsisting of oxides and oxo compounds of phosphorous, boron, arsenicand antimony.
 13. The device of claim 1, wherein the diffusible dopantcomprises one or more inorganic oxophosphorous compounds or acids,phosphosilicates, phosphates, phosphonates, phosphinates, phosphines,organic oxophosphorous compounds and acids, alkyl- and/or arylphosphonicand/or -phosphinic acids, inorganic boron compounds or acids,borosilicates, borazoles or polymers thereof, boron halogenides,boranes, sila- and/or azaboranes, organic boron compounds or acids,arsinosilanes, or oxo- and/or aza-analogs thereof.
 14. The device ofclaim 13, wherein the diffusible dopant comprises one or more inorganicoxophosphorous compounds or acids, phosphosilicates, phosphines,inorganic boron compounds or acids, borosilicates, boron halogenides, orboranes.
 15. The device of claim 1, wherein the substrate comprises aplate, disc or sheet of a glass, ceramic or plastic.
 16. The device ofclaim 1, wherein the substrate comprises a foil, sheet or disc of ametal.
 17. The device of claim 16, wherein the substrate comprises ametal foil.
 18. The device of claim 17, wherein the substrate furthercomprises a barrier layer on the metal foil.
 19. The device of claim 1,comprising the laminated or layered combination of the substrate. 20.The device of claim 19, comprising the laminated or layered combinationof the substrate with one or more planarization, insulator, barrier orsurface energy modifying layers.